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IETS spectrum and trap energy level within the Al2O3 band gap. (a)... |  Download Scientific Diagram
IETS spectrum and trap energy level within the Al2O3 band gap. (a)... | Download Scientific Diagram

Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em>  x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate  dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>

Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys |  Semantic Scholar
Figure 5 from Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys | Semantic Scholar

Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with...  | Download Scientific Diagram
Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram

arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017
arXiv:1703.01778v1 [cond-mat.mtrl-sci] 6 Mar 2017

PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic  Scholar
PDF] Band gap tuning of amorphous Al oxides by Zr alloying | Semantic Scholar

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

Structural, electronic structure, and band alignment properties at  epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray  techniques: Journal of Applied Physics: Vol 119, No 16
Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16

Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions:  Applied Physics Letters: Vol 104, No 19
Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19

Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap  type through density functional theory computations - ScienceDirect
Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetries | The Journal  of Physical Chemistry C
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C

Band offset determination for amorphous Al2O3 deposited on bulk AlN and  atomic-layer epitaxial AlN on sapphire
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire

Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN  interfaces: A first-principles study - ScienceDirect
Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study - ScienceDirect

Band gap structure modification of amorphous anodic Al oxide film by  Ti-alloying
Band gap structure modification of amorphous anodic Al oxide film by Ti-alloying

The stability of aluminium oxide monolayer and its interface with  two-dimensional materials | Scientific Reports
The stability of aluminium oxide monolayer and its interface with two-dimensional materials | Scientific Reports

Optical bandgap control in Al2O3/TiO2 heterostructures by plasma enhanced  atomic layer deposition: Toward quantizing structures and tailored binary  oxides - ScienceDirect
Optical bandgap control in Al2O3/TiO2 heterostructures by plasma enhanced atomic layer deposition: Toward quantizing structures and tailored binary oxides - ScienceDirect

Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x =  0.25–0.74
Valence band offsets for ALD SiO2 and Al2O3 on (InxGa1−x)2O3 for x = 0.25–0.74

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on  (100), (110), and (111)A GaAs substrates by molecular
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetri
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri

1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle  Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot
1 Electronic and Optical Properties of γ- and θ- Alumina by First Principle Calculations Ahmed S. Jbara1, 2, 3, *, Zulkafli Ot

Optical and Surface Studies of α-Al2O3 Powders
Optical and Surface Studies of α-Al2O3 Powders

Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... |  Download Scientific Diagram
Calculated band alignment between HfO2, Al2O3, InGaAs, and GaAs. The... | Download Scientific Diagram

Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators  from Internal Photoemission - Shlyakhov - 2019 - physica status solidi (a)  - Wiley Online Library
Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission - Shlyakhov - 2019 - physica status solidi (a) - Wiley Online Library

JSTS - Journal of Semiconductor Technology and Science
JSTS - Journal of Semiconductor Technology and Science

Interpretation of the Changing the Band Gap of Al2O3 Depending on Its  Crystalline Form: Connection with Different Local Symmetri
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri

Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download  Scientific Diagram
Band diagram of the TiO2/MAPbI3 and Al2O3/MAPbI3 interfaces,... | Download Scientific Diagram

Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3  and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16
Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers: Applied Physics Letters: Vol 104, No 16